eng URI http://hdl.handle.net/10795/2982 φυσικές επιστήμες ηλεκτρονική ηλεκτρολογικό υλικό ηλεκτρική ενέργεια Kelvin probe method has been directly applied to capacitive MEMS switches in order to investigate temperature activated mechanisms in PECVD Silicon Nitride (SiNx) films. The bulk discharge current of MEMS capacitive switches has been determined for different charging and discharging temperatures, in the range of 300–400 K. The increase of discharging temperature leads to an increase of the magnitude of the bulk discharge current and the relaxation time of the discharging process is found to be thermally activated. Finally, it is shown that the increase of charging temperature assists trapping at centers characterized by time constants even longer than the time window of observation, i.e. 10^4 s. 6 pp. LOMv1.0 creator LOMv1.0 publisher LOMv1.0 Scientific Coordinator LOMv1.0 Project Executing Organisation 2012-06-29 Digital Library of the Operational Programme "Education and Lifelong Learning" abstract types Text Dielectric charging MEMS capacitive switches reliability Kelvin probe method http://www.sciencedirect.com/science/article/pii/S0026271412001898 741210 application/pdf http://repository.edulll.gr/edulll/bitstream/10795/2982/2/2982_1.84_%ce%94%ce%97%ce%9c_29_6_12.pdf URI http://hdl.handle.net/10795/2982 LOMv1.0creator 2016-05-04T07:49:42Z LOMv1.0validator 2016-05-04T07:49:42Z LOMv1.0 gre no no Copyright EYD-EPEDBM (Operational Programme "Education and Lifelong Learning")